• DocumentCode
    472954
  • Title

    A Review of Recent Developments in Focused Ion Beam Applications

  • Author

    Kubena, R.L. ; Lee, J.Y. ; Jullens, R.A.

  • Author_Institution
    Hughes Research Laboratories 3011 Malibu Canyon Road, Malibu, CA 90265
  • fYear
    1984
  • fDate
    10-12 Sept. 1984
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    Submicrometer focused ion beams have been used for selective ion implantation of GaAs and Si depletion-mode FETs and for the gate lithography for n-channel enhancement-mode Si MOSFETs. Maximum transconductance values for the latter devices with tox = 100 Å and Lg = 0.5 ¿m were 140 mS/mm. Short-channel effects were minimal in these devices.
  • Keywords
    Doping; Gallium arsenide; Implants; Ion beam applications; Ion beams; Lithography; MESFETs; MOSFETs; Resists; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1984. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    4-930813-08-5
  • Type

    conf

  • Filename
    4480703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472954