Title :
A Review of Recent Developments in Focused Ion Beam Applications
Author :
Kubena, R.L. ; Lee, J.Y. ; Jullens, R.A.
Author_Institution :
Hughes Research Laboratories 3011 Malibu Canyon Road, Malibu, CA 90265
Abstract :
Submicrometer focused ion beams have been used for selective ion implantation of GaAs and Si depletion-mode FETs and for the gate lithography for n-channel enhancement-mode Si MOSFETs. Maximum transconductance values for the latter devices with tox = 100 Å and Lg = 0.5 ¿m were 140 mS/mm. Short-channel effects were minimal in these devices.
Keywords :
Doping; Gallium arsenide; Implants; Ion beam applications; Ion beams; Lithography; MESFETs; MOSFETs; Resists; Voltage;
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
