A Sub-Micron Electron-Beam Direct Writing for 1 μm Thick Negative Resist

A sub-micron electron-beam direct writing technology has considerable advantage for VLSIs. However, the proximity effect becomes serious in this region. The proximity effect may be avoided by using multilayer resist technique(l). But the multilayer resist process is more complex than single layer resist process. The dry-etching process requires a thick resist. Also, negative resist is useful in most e-beam direct writing because of its high throughput.