DocumentCode :
472961
Title :
Hot Carrier Injection in Submicron MOSFETs Fabricated by Rapid Isothermal Annealing
Author :
Mitsuhashi, J. ; Matsukawa, T. ; Sugimoto, K. ; Kawazu, S.
Author_Institution :
LSI Research & Development Laboratory, Mitsubishi Electric Corporation 4-1 Mizuhara, Itami, Hyogo 664 Japan
fYear :
1984
fDate :
10-12 Sept. 1984
Firstpage :
84
Lastpage :
85
Keywords :
Furnaces; Hot carrier injection; Interface states; Isothermal processes; Large scale integration; MOSFETs; Oxidation; Rapid thermal annealing; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
4-930813-08-5
Type :
conf
Filename :
4480711
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472961
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