DocumentCode :
47391
Title :
Development of a Semiempirical Compact Model for DC/AC Cell Operation of 
-Based ReRAMs
Author :
Jinwoo Noh ; Minseok Jo ; Chang Yong Kang ; Gilmer, D. ; Kirsch, P. ; Lee, Jong Chul ; Byoung Hun Lee
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
34
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
1133
Lastpage :
1135
Abstract :
A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfOx-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.
Keywords :
hafnium compounds; random-access storage; DC/AC cell operation; HfOx; HfOx-based ReRAM; RESET operation; current crowding effect; filament-type HfOx; ion migration model; resistance change random access memory; semiempirical compact model; time-dependent device characteristic; Data models; Hafnium compounds; Integrated circuit modeling; Materials; Resistance; SPICE; Switches; ${rm HfO}_{rm{x}}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2271831
Filename :
6562784
Link To Document :
