Manipulation on infrared-single-photon by frequency upconversion

Author

Haoyang Cui ; Lu, Wei ; Li, Zhifeng ; Liu, Zhaolin ; Chong Wang ; Chen, Xiaoshung ; Hu, Xiaoning ; Ye, Zhenhua

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

126

Lastpage

127

Abstract

The tunability of the two photon absorption coefficient (TPAC) is studied in the HgCdTe p-n junction with the external bias voltage. The TPAC in the p-n junction region will strongly manipulated by the build-in field induced Franz- Keldysh (F-K) effect on the energy band structure. The obvious two photon absorption process is clearly observed as the nonlinear enhancement of photo-voltage on the incident light intensity in the power of 2. The maximum enhancement factor of the TPAC has been achieved as high as 12 times. It can be very useful for the nonlinear optical device.

Keywords

absorption coefficients; p-n junctions; photons; HgCdTe; build-in field induced Franz-Keldysh effect; energy band structure; external bias voltage; frequency upconversion; infrared-single-photon; light intensity; nonlinear enhancement; nonlinear optical device; p-n junction; photo-voltage; two photon absorption coefficient; Frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516423

Filename

4516423