Indium Nitride as novel THz-radiation source for time-domain THz-systems

Author

Wilke, Ingrid ; Ascazubi, Ricardo ; Liu, Hai ; Schaff, William

Author_Institution

Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

148

Lastpage

149

Abstract

We report an experimental study of femtosecond near-infrared optically excited THz-emission from InN thin films grown by molecular beam epitaxy (MBE) on sapphire substrates. THz-emission was investigated as a function of structural as well as electronic properties such as types of buffer layer, film thickness, electron mobilities, electron concentrations and doping of the InN with Si and Mg atoms. The THz-emission mechanism in InN has been analyzed. Ultrafast transient currents are identified as dominant THz-emission mechanisms. Ultrafast carrier recombination is identified as a limiting factor of THz-emission from n-type InN: Si.

Keywords

electron mobility; indium compounds; molecular beam epitaxial growth; sapphire; submillimetre wave generation; wide band gap semiconductors; InN; buffer layer; electron concentrations; electron mobilities; electronic properties; femtosecond near infrared optically excited; molecular beam epitaxy; sapphire substrates; terahertz emission; thin films grown; time domain terahertz systems; ultrafast transient currents; Atom optics; Electron mobility; Electron optics; Indium; Molecular beam epitaxial growth; Optical buffering; Optical films; Time domain analysis; Ultrafast electronics; Ultrafast optics; Indium compounds; Semiconductor epitaxial layers; Semiconductor materials measurements; Submillimeter wave generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516433

Filename

4516433