Generation of terahertz pulsed radiation from photoconductive emitters using 1060 nm laser excitation

Author

Hinkov, I. ; Harzendorf, G. ; Kluska, S. ; Hinkov, B. ; Kamaruzaman, K. ; Beigang, R. ; Heinrich, J. ; Hoefling, S. ; Forchel, A.

Author_Institution

Fraunhofer Inst. for Phys. Meas. Tech., Freiburg

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

196

Lastpage

197

Abstract

In this paper we report experimental results on the generation of broadband terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3-4 THz, the signal to noise ratio was more than one hundred.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; submillimetre wave lasers; submillimetre wave spectroscopy; InGaAs; broadband terahertz radiation; emitter function; laser excitation; low-temperature-grown; photoconductive emitters; semiconductor layers; signal to noise ratio; terahertz pulsed radiation; time-domain-spectroscopy system; wavelength 1060 nm; Fiber lasers; Indium gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical fiber cables; Optical pulse generation; Photoconductivity; Rapid thermal annealing; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516457

Filename

4516457