Title :
Terahertz pump-probe spectroscopy in LT-InGaAs thin film
Author :
Nagai, Masaya ; Tanaka, Koichiro ; Takazato, Akihiro ; Kadoya, Yutaka
Author_Institution :
Kyoto Univ., Kyoto
Abstract :
We perform terahertz time-domain pump-probe spectroscopy in low-temperature-grown InGaAs substrate. Temporal evolution of differential optical density shows that photoinduced carrier decays a few picoseconds at low excitation density and several picoseconds at high excitation density. These features of carriers´ lifetime and amplitudes of short- and long-lifetime components directly involve emission and detection efficiencies for photoconductive switch, giving us guideline of THz devices adapted for 1.56 mum fiber laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting switches; semiconductor thin films; submillimetre wave spectra; InGaAs; LT-InGaAs thin film; THz device; differential optical density; excitation density; fiber laser; low-temperature-grown InGaAs substrate; photoconductive switch; photoinduced carrier; terahertz time-domain pump-probe spectroscopy; wavelength 1.56 micron; Indium gallium arsenide; Laser excitation; Optical films; Optical pumping; Photoconducting devices; Spectroscopy; Stimulated emission; Substrates; Time domain analysis; Transistors; Charge carrier processes; Photoconductivity; Semiconductor materials measurement; Ultrafast electronics;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516474
