Terahertz pump-probe spectroscopy in LT-InGaAs thin film

Author

Nagai, Masaya ; Tanaka, Koichiro ; Takazato, Akihiro ; Kadoya, Yutaka

Author_Institution

Kyoto Univ., Kyoto

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

230

Lastpage

231

Abstract

We perform terahertz time-domain pump-probe spectroscopy in low-temperature-grown InGaAs substrate. Temporal evolution of differential optical density shows that photoinduced carrier decays a few picoseconds at low excitation density and several picoseconds at high excitation density. These features of carriers´ lifetime and amplitudes of short- and long-lifetime components directly involve emission and detection efficiencies for photoconductive switch, giving us guideline of THz devices adapted for 1.56 mum fiber laser.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoconducting switches; semiconductor thin films; submillimetre wave spectra; InGaAs; LT-InGaAs thin film; THz device; differential optical density; excitation density; fiber laser; low-temperature-grown InGaAs substrate; photoconductive switch; photoinduced carrier; terahertz time-domain pump-probe spectroscopy; wavelength 1.56 micron; Indium gallium arsenide; Laser excitation; Optical films; Optical pumping; Photoconducting devices; Spectroscopy; Stimulated emission; Substrates; Time domain analysis; Transistors; Charge carrier processes; Photoconductivity; Semiconductor materials measurement; Ultrafast electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516474

Filename

4516474