Room temperature amplification of optical-beating photoresponse in HEMTs

Author

Torres, Jérémi ; Nouvel, Philippe ; Palermo, Christophe ; Chusseau, Laurent ; Varani, Luca ; Teppe, Frédéric ; Shchepetov, Andrey ; Bollaert, Sylvain

Author_Institution

Inst. d´Electron. du Sud, Univ. Montpellier, Montpellier

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

738

Lastpage

739

Abstract

The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied DC drain-source current is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs-InP; DC drain-source current; HEMT; cw-lasers beating; frequency 0 GHz to 600 GHz; high-electron-mobility transistor; optical-beating photoresponse; photoresponse amplification; plasma resonant frequency; plasma waves; room temperature amplification; tunable terahertz resonant detection; wavelength 1.55 mum; FETs; Frequency; HEMTs; MODFETs; Nonlinear optics; Optical mixing; Plasma waves; Resonance; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516707

Filename

4516707