Title :
Temperature dependent carrier dynamics of InAs/GaAs quantum dots probed by terahertz time-domain spectroscopy
Author :
Oh, S.J. ; Maeng, I.H. ; Kim, H.M. ; Cho, N.K. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Son, J.-H.
Author_Institution :
Yonsei Univ., Seoul
Abstract :
We have utilized the terahertz time-domain spectroscopy to investigate the temperature dependent carrier dynamics n-type modulation-doped InAs/GaAs quantum dots and estimated the total number of electrons captured by the quantum dots from 10 K to 290 K. The absorption of the sample with quantum dots decrease monotonically as the temperature is lowered because quantum dots capture more free carriers at lower temperatures, while the absorption of the sample without quantum dots is the highest at 100 K because the electron mobility is the highest at that temperature.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; indium compounds; semiconductor quantum dots; submillimetre wave spectra; electron mobility; modulation-doped quantum dots; temperature 10 K to 20 K; temperature dependent carrier dynamics; terahertz time-domain spectroscopy; Absorption; EMP radiation effects; Electron mobility; Epitaxial layers; Gallium arsenide; Quantum dot lasers; Quantum dots; Spectroscopy; Temperature dependence; Time domain analysis; carrier dynamics; quantum dots; terahertz; terahertz time-domain spectroscopy;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516722
