Title :
Fast quasi-optical phase shifter based on induced photoconductivity in silicon
Author :
Denisov, G.G. ; Kocharovsky, V.V. ; Kuzikov, S.V. ; Parshin, V.V. ; Peskov, N.Yu. ; Stepanov, A.N. ; Sobolev, D.I. ; Shmelyov, M.Yu.
Author_Institution :
Inst. of Appl. Phys., Russian Acad. of Sci., Nizhny Novgorod
Abstract :
A 30 GHz commutator aimed to switch phase of 0.1-1 mks, 1-100 MW microwaves in pulse compression systems like SLED is suggested. The commutator in a form of circular (100 mm) Si-disk put on a surface of copper mirror is based on creation of thin photoconductive layer in high purity low-loss silicon. The photoconductivity is caused by means of Ti:Sa laser radiation (1-10 mJ, 0.1 ps) with wavelength 795 nm. Results of low power tests carried out with the 180 degrees phase shifter, which was operated with Gaussian wavebeam, have showed high efficient phase switching for time ~1 ns. High-power tests are scheduled in CERN on the end of 2007.
Keywords :
microwave phase shifters; optical phase shifters; optical pulse compression; photoconductivity; silicon; Gaussian wavebeam; Si; Ti:Sa laser radiation; commutators; frequency 30 GHz; induced photoconductivity; microwave phase switching; power 1 MW to 100 MW; pulse compression systems; quasi-optical phase shifter; thin photoconductive layer; wavelength 795 nm; Electromagnetic wave absorption; Masers; Mirrors; Optical pulse compression; Phase shifters; Photoconductivity; Pulse compression methods; Semiconductor lasers; Silicon; Testing; lasers; photoconductivity; pulse compressors;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516735
