Title :
Characteristics of intense THz radiation from coherent LO phonons in GaAs/AlAs multiple quantum wells
Author :
Mizoguchi, K. ; Saito, S. ; Sakai, K. ; Yamamoto, N. ; Akahane, K. ; Nakayama, M.
Author_Institution :
Dept. of Phys. Sci., Osaka Prefecture Univ., Sakai
Abstract :
We have succeeded in generating the intense terahertz (THz) radiation from coherent GaAs-like longitudinal optical (LO) phonons in GaAs/AlAs multiple quantum wells (MQWs). Its radiation power is much larger than that from coherent LO phonons in a GaAs epitaxial film. We report the characteristics of the intense THz radiation from the coherent GaAs-like LO phonons in the MQWs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; phonons; semiconductor quantum wells; submillimetre wave generation; GaAs-AlAs; LO phonons; THz radiation; coherent longitudinal optical phonons; intense terahertz radiation; multiple quantum wells; Gallium arsenide; Optical films; Optical pulse generation; Optical sensors; Phonons; Photoconductivity; Pulse measurements; Quantum well devices; Stimulated emission; Surface emitting lasers;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516825
