Interdigitated terahertz emitters

Author

Acuna, Guillermo P. ; Buersgens, Federico F. ; Lang, Christian ; Kersting, Roland

Author_Institution

Photonics & Optoelectron. Group, Univ. of Munich, Munich

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

1000

Lastpage

1001

Abstract

We present a time-resolved study on the ultrafast carrier dynamics, which lead to the emission of few-cycle THz pulses from biased semiconductor structures. The properties of the emitted THz radiation show that carrier transport in inhomogeneous fields dominates the emission due to transport of both, electrons and holes. The results are applied for the fabrication of a novel high intensity THz emitter with an improved device concept.

Keywords

submillimetre wave devices; submillimetre wave generation; THz radiation; biased semiconductor structure; few-cycle THz pulse; interdigitated terahertz emitter; ultrafast carrier dynamics; Charge carrier processes; Electron emission; Fabrication; Fingers; Gallium arsenide; Millimeter wave devices; Millimeter wave measurements; Millimeter wave technology; Nonuniform electric fields; Pulse measurements; Millimeter wave generation; millimeter wave devices; time domain measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516827

Filename

4516827