Effects indium impurity on optical gap in Nanolayer InxGa(1−x)As in The Presence of Spin Orbit Interaction by VCA

We calculate the band structure of the In_xGa_(1-x) As , in the effective mass approximation (EMA) by using virtual crystal approximation based on an 8-band kp formalism. There are several published 8-band kp Hamiltonians, each including a more or less detailed set of effects. For the calculations shown, the Hamiltonian constructed by Trebin et al. has been implemented. This 8-band kp Hamiltonian is constructed solely on group theory arguments and, when applied correctly, guarantees the inclusion of all matrix elements compatible with the Td symmetry group of the zincblendes up to the desired order in the electron wave vector k.Finally we have calculated energy gap in various wave vector K versus impurity percent. It is shown that by increasing Indium (In) percent the band gap energy is decreased. So we can control optical properties of this mater by changing In percent.