DocumentCode :
474289
Title :
Why the Energy Levels Observed in Electrical Transport, Phototransport and Photoluminescence are Different?
Author :
Ciurea, M.L. ; Iancu, V.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele
Volume :
1
fYear :
2007
fDate :
Oct. 15 2007-Sept. 17 2007
Firstpage :
41
Lastpage :
44
Abstract :
The paper presents an analysis of the electrical transport, phototransport and photoluminescence measurements performed on silicon-based nanocrystalline systems. The experimental results are discussed within the frame of a quantum confinement model. It is proved that the differences between the energy levels identified in the measurements are related to the quantum selection rules specific to each process. It is also proved that, at nanometric scale, the nature of the atoms composing the nanocrystal represents a first order correction, while the size represents a zero order factor.
Keywords :
electrical conductivity; elemental semiconductors; nanostructured materials; photoluminescence; silicon; Si; electrical transport measurement; nanocrystalline systems; photoluminescence measurement; phototransport measurement; quantum confinement model; Electrodes; Energy states; Nanocomposites; Oxidation; Performance evaluation; Photoconductivity; Photoluminescence; Potential well; Silicon; Wavelength measurement; electrical transport; nanocrystalline silicon; photoluminescence; phototransport; quantum confinement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-0847-4
Type :
conf
DOI :
10.1109/SMICND.2007.4519643
Filename :
4519643
Link To Document :
بازگشت