Title :
High-Performance 1.3 μm Dilute-Nitride Edge-Emitting Lasers
Author :
Dumitrescu, M. ; Larsson, A. ; Wei, Y. ; Larkins, E. ; Uusimaa, P. ; Schulz, K. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GalnAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; semiconductor lasers; EU-FP6 project; access area networks; dilute-nitride edge-emitting lasers; dilute-nitride materials; epitaxial growth; laser structure; metropolitan networks; post-growth treatment; slope efficiency; threshold currents; uncooled transmitters; Bonding; Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical materials; Optical transmitters; Surface emitting lasers; Temperature sensors; Vertical cavity surface emitting lasers; 10 Gb/s large-signal modulation; dilute-nitride; extended operating temperature range; high characteristic temperature; low threshold current;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519673
