• DocumentCode
    474314
  • Title

    Comparative Characterization of PbS Macro- And Nano-Crystalline Photoresistive Detectors

  • Author

    Iordache, G. ; Buda, M. ; Stancu, V. ; Botila, T.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest
  • Volume
    1
  • fYear
    2007
  • fDate
    Oct. 15 2007-Sept. 17 2007
  • Firstpage
    199
  • Lastpage
    202
  • Abstract
    A comparative study of photodetector performance for nano- and micro-crystalline PbS thin layers is presented. Both types of PbS films were obtained using the Chemical Bath Deposition method. To prepare nano-crystalline thin films we used a short reaction time with no doping Bi added. At low levels of irradiance (0.1 m W/cm2) and room temperature (RT), the macro-crystalline PbS outperforms its nano- crystalline counterpart, by a factor of 6 for the value of DeltaR/Rdark However the nano-crystalline photodetectors show significantly lower optical quenching for large values of irradiance (ap 500 mW/cm2) at RT and better DeltaR/Rdark performance at lower temperature, with an optimum temperature of 150 K. The low frequency noise behavior is a superposition of 1/f flicker noise at low frequency and generation-recombination and thermal noise at higher frequency. The proportionality factor between the 1/f noise and the DC dark current for the series resistor is 1.5 times larger for the nano-crystalline photodetector at room temperature.
  • Keywords
    IV-VI semiconductors; crystal microstructure; dark conductivity; lead compounds; nanostructured materials; photodetectors; photoresistors; radiation quenching; semiconductor thin films; DC dark current; PbS; chemical bath deposition; generation-recombination; macrocrystalline photoresistive detector; nanocrystalline photoresistive detector; optical quenching; photodetector; resistor; temperature 293 K to 298 K; thermal noise; thin films; 1f noise; Bismuth; Chemicals; Detectors; Doping; Frequency; Low-frequency noise; Photodetectors; Temperature; Transistors; Heterostructures; Nano-crystalline PbS; Optoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2007. CAS 2007. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-0847-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2007.4519680
  • Filename
    4519680