Negative Photoconductivity of Amorphous Sb2Se3 and Sb2Se3:Sn Films

Author

Iovu, M.S. ; Vasiliev, I.A. ; Colomeico, E.P.

Author_Institution

Center of Optoelectron., Acad. of Sci. of Moldova, Cishinau

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

219

Lastpage

222

Abstract

The photoconductivity spectra of amorphous Sb₂Se₃ and Sb₂Se₃.Sn films in the photon energy range 1.0 + 2.5 eV have been investigated. The band connected with the presence of the defect states with the maximum located at 1.46 eV was revealed in the photoconductivity spectra. The intensity of this band increases in the samples with tin impurity. The transient photocurrent in the interval of times from 0.2 to 20 s is investigated also. The experimental data are discussed in framework of the model of the charged defects and non-equilibrium dielectric polarization in amorphous semiconductors.

Keywords

amorphous semiconductors; antimony compounds; defect states; dielectric polarisation; photoconducting materials; photoconductivity; semiconductor thin films; tin; Sb₂Se₃; Sb₂Se₃:Sn; amorphous films; amorphous semiconductors; defect states; electron volt energy 1.46 eV; negative photoconductivity; nonequilibrium dielectric polarization; photon energy; tin impurity; transient photocurrent; Amorphous materials; Amorphous semiconductors; Charge carriers; Dielectric thin films; Impurities; Optical films; Photoconductivity; Photonic band gap; Polarization; Tin; amorphous semiconductors; dielectric polarization; the charged defects; the steady-state photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519685

Filename

4519685