Title :
Negative Photoconductivity of Amorphous Sb2Se3 and Sb2Se3:Sn Films
Author :
Iovu, M.S. ; Vasiliev, I.A. ; Colomeico, E.P.
Author_Institution :
Center of Optoelectron., Acad. of Sci. of Moldova, Cishinau
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
The photoconductivity spectra of amorphous Sb2Se3 and Sb2Se3.Sn films in the photon energy range 1.0 + 2.5 eV have been investigated. The band connected with the presence of the defect states with the maximum located at 1.46 eV was revealed in the photoconductivity spectra. The intensity of this band increases in the samples with tin impurity. The transient photocurrent in the interval of times from 0.2 to 20 s is investigated also. The experimental data are discussed in framework of the model of the charged defects and non-equilibrium dielectric polarization in amorphous semiconductors.
Keywords :
amorphous semiconductors; antimony compounds; defect states; dielectric polarisation; photoconducting materials; photoconductivity; semiconductor thin films; tin; Sb2Se3; Sb2Se3:Sn; amorphous films; amorphous semiconductors; defect states; electron volt energy 1.46 eV; negative photoconductivity; nonequilibrium dielectric polarization; photon energy; tin impurity; transient photocurrent; Amorphous materials; Amorphous semiconductors; Charge carriers; Dielectric thin films; Impurities; Optical films; Photoconductivity; Photonic band gap; Polarization; Tin; amorphous semiconductors; dielectric polarization; the charged defects; the steady-state photoconductivity;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519685
