Title :
Which Architecture to Choose for Robust RF-MEMS Phase Shifters?
Author :
Puyal, V. ; Dubuc, D. ; Grenier, K. ; Bordas, C. ; Vendier, O. ; Cazaux, J.-L.
Author_Institution :
LAAS-CNRS, Toulouse Univ., Toulouse
fDate :
Oct. 15 2007-Sept. 17 2007
Abstract :
This paper presents the design and performance of RF-MEMS Phase Shifters in a technology which is fully compatible with Si IC. The used technology aims to fabricate RF-MEMS devices which are able to handle medium RF- power. Two Phase Shifter versions were designed and compared with respect to capacitance fluctuations.
Keywords :
capacitance; micromechanical devices; monolithic integrated circuits; phase shifters; Si IC; capacitance fluctuations; medium RF-power; robust RF-MEMS phase shifters; Bridge circuits; Capacitance; Frequency; Impedance; Micromechanical devices; Phase shifters; Radiofrequency microelectromechanical systems; Robustness; Space technology; Switches; Ka-Band; Loaded-Line; Phase Shifters; RF-MEMS; Switched-Line;
Conference_Titel :
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-0847-4
DOI :
10.1109/SMICND.2007.4519698
