Membrane Supported AlN FBAR Structures Obtained by Micromachining of High Resistivity Silicon

Author

Neculoiu, D. ; Vasilache, D. ; Konstantinidis, G. ; Morosanu, C. ; Stavrinidis, A. ; Kostopoulos, A. ; Cismaru, A. ; Buiculescu, C. ; Petrini, I. ; Müller, A.

Author_Institution

lMT-Bucharest, Bucharest

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

293

Lastpage

296

Abstract

This paper presents the manufacturing and the characterization of AIN membrane supported F-BAR structures. The 2 mum thin AIN layer was grown using sputtering techniques, on a high resistivity (111) oriented silicon substrate. Conventional contact lithography, e-gun Ti/Au evaporation and lift-off techniques were used to define top-side metallization of the the FBAR structures. Bulk micromachinig techniques were used for the release of the AIN membrane. The bottom side metallization of the micromachined structure was obtained by means of sputtered gold. S-parameter measurements have shown a resonance around 1.6 GHz. The extracted value of acoustic velocity is in good agreement with that reported by other authors on materials fabricated by other methods.

Keywords

acoustic resonators; aluminium compounds; lithography; micromachining; silicon; AIN membrane; ALN FBAR structures; contact lithography; high resistivity silicon; micromachining; Biomembranes; Conductivity; Film bulk acoustic resonators; Gold; Lithography; Metallization; Micromachining; Pulp manufacturing; Silicon; Sputtering; AlN membranes; FBAR structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519705

Filename

4519705