Title :
Carrier leakage in GaInNAsSb quantum well lasers
Author :
Ferguson, J.W. ; Smowton, P.M. ; Blood, P. ; Gupta, J.A. ; Aers, G.C.
Author_Institution :
Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff
Abstract :
We assess the non-radiative recombination mechanisms in GaInNAsSb structures by comparing p-doped, n-doped and un-doped material. Our results indicate a contribution from thermally activated leakage in 1.55 mum GaInNAsSb Quantum well lasers at elevated temperatures.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; GaInNAsSb; carrier leakage; non-radiative recombination; quantum well lasers; thermally activated leakage; wavelength 1.55 micron; Absorption; Current density; Doping; Energy measurement; Epitaxial layers; Gallium arsenide; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; 140.5960 (Semiconductor lasers); 250.0250 (Optoelectronics);
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
