Title :
High extraction efficiency GaN light-emitting diode with photonic crystal patterns and angled sidewall deflectors
Author :
Lee, Joonhee ; Kim, Donguk ; Kim, Sihan ; Ahn, Sungmo ; Jeon, Heonsu
Author_Institution :
Dept. of Phys.&Astron., Seoul Nat. Univ., Seoul
Abstract :
We integrated into GaN LEDs both two-dimensional photonic crystal patterns and angled sidewall deflectors. The resultant devices exhibited about three-fold enhancement in vertical emission intensity when compared with the planar reference LED device.
Keywords :
III-V semiconductors; gallium compounds; integrated optoelectronics; light emitting diodes; photonic crystals; GaN; angled sidewall deflectors; gallium nitride light-emitting diode integration; high extraction efficiency LED; planar reference LED device; two-dimensional photonic crystal patterns; vertical emission intensity; Astronomy; Gallium nitride; Holographic optical components; Holography; Light emitting diodes; Optical devices; Photonic crystals; Physics; Stimulated emission; Variable speed drives; (230.3670) Light-emitting diodes; (230.5298) Photonic Crystals;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
