Title :
High efficiency white LEDs with 2D photonic quasi-crystal and patterned sapphire substrate
Author :
Chiu, C.H. ; Cheng, B.S. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Huang, H.W. ; Yu, C.C. ; Lin, C.H.
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu
Abstract :
A high emitting efficiency GaN-based white LED with 2D PQC on surface and PSS were successfully fabricated. After packaging, 21% enhancement in emitting luminous flux was achieved under the driving current 20 mA.
Keywords :
III-V semiconductors; electronics packaging; gallium compounds; light emitting diodes; optical fabrication; photonic crystals; sapphire; 2D photonic quasicrystal; Al2O3; GaN; LED fabrication; current 20 mA; high efficiency white LED; lighting efficiency; luminous flux; packaging; patterned sapphire substrate; Electron emission; Etching; Gallium nitride; Light emitting diodes; Lithography; Optical surface waves; Packaging; Phosphors; Plasma temperature; Power generation; (220.4241);
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
