• DocumentCode
    474687
  • Title

    Advances in single crystal ZnGeP2 processing for high energy applications

  • Author

    Zawilski, Kevin T. ; Schunemann, Peter G. ; Setzler, Scott D. ; Pollak, Thomas M.

  • Author_Institution
    Adv. Syst. & Technol., BAE Syst., Nashua, NH
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Scale-up of single crystal ZnGeP2 resulting in 30 times 30 mm2 aperture, high-quality optical samples has been demonstrated. The combination of increased aperture and improved LIDT has resulted in material better suited to high energy applications.
  • Keywords
    crystal structure; laser beam effects; zinc compounds; ZnGeP2; high energy applications; high-quality optical samples; laser induced damage threshold; optical aperture; single crystal processing; Apertures; Conducting materials; Crystalline materials; Crystals; Electromagnetic wave absorption; Frequency conversion; Furnaces; Nonlinear optics; Optical materials; Temperature; (140.3330) Laser damage; (140.3390) Laser materials processing; (160.4330) Non-linear optical materials;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=474687