DocumentCode :
474745
Title :
All-optical injection, control, and detection of ballistic charge transport in semiconductors
Author :
Smirl, Arthur L. ; Zhao, Hui ; Loren, Eric J. ; Van Driel, Henry M.
Author_Institution :
Lab. for Photonics&Quantum Electron., Univ. of Iowa, Iowa City, IA
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
Ballistic pure charge currents are injected into GaAs quantum wells using quantum interference techniques and are spatially and temporally resolved for the first time. The dynamics are dominated by momentum relaxation and space charge effects.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; charge injection; gallium arsenide; semiconductor quantum wells; space-charge-limited conduction; GaAs-Al0.3Ga0.7As; all-optical charge control; all-optical charge detection; all-optical charge injection; ballistic charge transport; momentum relaxation; quantum interference techniques; semiconductor quantum wells; space charge effects; Absorption; Charge carrier processes; Charge measurement; Current measurement; Gallium arsenide; Interference; Nonlinear optics; Pulse measurements; Quantum well devices; Spatial resolution; (190.5970) Semiconductor nonlinear optics; (320.7130) Ultrafast processes in condensed matter;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572717
Link To Document :
بازگشت