DocumentCode
474758
Title
Lasing in sub-micron semiconductor disk
Author
Song, Qinghai ; Andreasen, Jonathan ; Cao, Hui ; Ho, Seng T. ; Solomon, Glenn S.
Author_Institution
Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Lasing was realized a sub-micron GaAs disk, which was fabricated by standard optical lithography and wet-etching method. As the disk thickness is comparable to the disk radius, 3D-FDTD was used to simulate the resonant modes.
Keywords
III-V semiconductors; etching; finite difference time-domain analysis; gallium arsenide; laser beams; laser modes; microdisc lasers; optical fabrication; photolithography; semiconductor lasers; wetting; 3D-FDTD simulation; GaAs; disk radius; disk thickness; laser modes; resonant modes; standard optical lithography; submicron disk laser fabrication; submicron semiconductor disk lasing mechanism; wet-etching method; Finite difference methods; Gallium arsenide; Indium gallium arsenide; Laser modes; Lithography; Optical pumping; Pump lasers; Resonance; Time domain analysis; Wet etching;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572753
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