Ultrafast photoinduced ferromagnetic phase enhancement in ion implanted GaMnAs

Author

Cotoros, Ingrid ; Wang, Jigang ; Stone, Peter ; Dubon, Oscar ; Chemla, Daniel

Author_Institution

Dept. of Phys., Univ. of California at Berkeley, Berkeley, CA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We report on the dramatic ultrafast photo-enhancement of ferromagnetism on a 100 picosecond timescale in ion-implanted semiconductor GaMnAs via photoexcited transient carriers. This non-thermal, transient cooperative magnetic process surprisingly quenches at low temperatures, significantly bellow the Curie temperature.

Keywords

ferromagnetic materials; gallium compounds; ion implantation; magnetic semiconductors; photoexcitation; Curie temperature; GaMnAs; ferromagnetic phase enhancement; ferromagnetism; ion implanted GaMnAs; photoexcited transient carriers; semiconductor GaMnAs; time 100 ps; transient cooperative magnetic process; ultrafast photo-enhancement; Bellows; Demagnetization; Magnetic confinement; Magnetic field measurement; Magnetic materials; Magnetic semiconductors; Magnetization; Molecular beam epitaxial growth; Semiconductor materials; Temperature dependence; 160.6990) Transition-metal-doped materials; 320.7130) Ultrafast processes in condensed matter, including semiconductors;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572858