DocumentCode
475204
Title
InP-based two dimensional photonic crystals - A material and processing perspective
Author
Anand, S. ; Berrier, A.
Author_Institution
Dept. of Microelectron. & Appl. Phys., R. Inst. of Technol., Kista
Volume
2
fYear
2008
fDate
22-26 June 2008
Firstpage
25
Lastpage
25
Abstract
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall surface potential will be demonstrated.
Keywords
III-V semiconductors; carrier lifetime; etching; indium compounds; photonic crystals; semiconductor quantum wells; surface potential; InP; carrier lifetimes; carrier transport; emitter applications; feature-size dependent etching; high aspect ratio etching; optical properties; quantum wells; side-wall damage; surface potential; switching applications; two dimensional photonic crystals; Charge carrier lifetime; Crystalline materials; Etching; Microelectronics; Optical device fabrication; Optical materials; Photonic crystals; Physics; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2008. ICTON 2008. 10th Anniversary International Conference on
Conference_Location
Athens
Print_ISBN
978-1-4244-2625-6
Electronic_ISBN
978-1-4244-2626-3
Type
conf
DOI
10.1109/ICTON.2008.4598579
Filename
4598579
Link To Document