InP 2D photonic crystal on SOI hybrid devices

We report on a continuous wave laser based on a two-dimensional photonic crystal band edge structure operating at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. The dynamics of this laser is studied under ultrashort optical excitation, the temporal behaviour of the emission are accurately measured thanks to a technique with a 200 fs resolution. The measured temporal response of the lasers, point towards fast modulation speeds. The subsequent step of course is to couple light between the III-V photonic crystal and SOI waveguides. The possibility to integrate a large number of photonic digital units together, but also to integrate them with compact passive optical routers, opens new perspectives for InP 2D photonic crystal on SOI hybrid devices.