DocumentCode
475399
Title
Analytical modeling of the electrostatic potential in MOS devices by conformal mapping
Author
Kloes, A. ; Weidemann, M.
Author_Institution
University of Applied Sciences Giessen-Friedberg, GERMANY
fYear
2008
fDate
19-21 June 2008
Firstpage
53
Lastpage
58
Abstract
In this paper we summarize the basics of the conformal mapping technique and demonstrate its usefulness to two-dimensional bulk MOS transistor modeling. Furthermore we present an analytical technique, which allows to apply the 2D conformal mapping technique to the 3D potential problem in a triple-gate device. Herewith model equations for potential barrier, subthreshold slope and threshold voltage in FinFETs have been derived.
Keywords
Analytical models; Boundary conditions; Conformal mapping; Dielectric substrates; Electrodes; Electrostatic analysis; Equations; MOS devices; Silicon; Threshold voltage; Conformal mapping; MOSFET; Modeling; Potential;
fLanguage
English
Publisher
iet
Conference_Titel
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location
Poznan, Poland
Print_ISBN
978-83-922632-7-2
Electronic_ISBN
978-83-922632-8-9
Type
conf
Filename
4600855
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