DocumentCode
475402
Title
Electrical characterization of MOSFETS with ultrathin SiON gate dielectric
Author
Jasinski, J. ; Gluszko, G. ; Iwanowicz, M. ; Tomaszewski, D. ; Lukasiak, L. ; Jakubowski, A.
Author_Institution
Warsaw University of Technology, POLAND
fYear
2008
fDate
19-21 June 2008
Firstpage
71
Lastpage
74
Abstract
The aim of this paper is extensive electrical characterization of MOS devices with ultrathin SiON gate dielectric. I-V characteristics are measured and basic transistor parameters (threshold voltage, DIBL, subthreshold swing and series S/D resistance) are extracted and their dependence on channel length investigated. Moreover, the dependence of gate current on channel length and the quality of the dielectric-silicon interface are studied.
Keywords
Charge pumps; Dielectric devices; Electric resistance; Electrons; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Parameter extraction; Threshold voltage; Charge pumping; Gate current; MOSFET; Parameter extraction; SiON;
fLanguage
English
Publisher
iet
Conference_Titel
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location
Poznan, Poland
Print_ISBN
978-83-922632-7-2
Electronic_ISBN
978-83-922632-8-9
Type
conf
Filename
4600859
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