Title :
Electrical characterization of MOSFETS with ultrathin SiON gate dielectric
Author :
Jasinski, J. ; Gluszko, G. ; Iwanowicz, M. ; Tomaszewski, D. ; Lukasiak, L. ; Jakubowski, A.
Author_Institution :
Warsaw University of Technology, POLAND
Abstract :
The aim of this paper is extensive electrical characterization of MOS devices with ultrathin SiON gate dielectric. I-V characteristics are measured and basic transistor parameters (threshold voltage, DIBL, subthreshold swing and series S/D resistance) are extracted and their dependence on channel length investigated. Moreover, the dependence of gate current on channel length and the quality of the dielectric-silicon interface are studied.
Keywords :
Charge pumps; Dielectric devices; Electric resistance; Electrons; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Parameter extraction; Threshold voltage; Charge pumping; Gate current; MOSFET; Parameter extraction; SiON;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location :
Poznan, Poland
Print_ISBN :
978-83-922632-7-2
Electronic_ISBN :
978-83-922632-8-9
