Title :
A 72.2Mbit/S LC-based power amplifier in 65nm CMOS for 2.4Ghz 802.11n WLAN
Author :
Fritzin, J. ; Johansson, T. ; Alvandpour, A.
Author_Institution :
Linköping University of Technology, SWEDEN
Abstract :
This paper describes the design and evaluation of a power amplifier (PA) for WLAN 802.11n in 65nm CMOS technology. The PA utilizes 3.3V thick-gate oxide (5.2nm) transistors and a two-stage differential configuration with two integrated inductors for input and interstage matching. For a 72.2Mbit/s, 64-QAM 802.11n OFDM signal at an average and peak output power of 9.4dBm and 17.4dBm, respectively, the measured EVM is 3.8%. The PA meets the spectral mask up to an average output power of 14dBm.
Keywords :
CMOS analog integrated circuits; CMOS technology; Capacitors; Impedance matching; Inductors; Integrated circuit technology; Parasitic capacitance; Power amplifiers; Voltage; Wireless LAN; Baluns; CMOS analog integrated circuits; Impedance matching; Power amplifiers; Transformers;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location :
Poznan, Poland
Print_ISBN :
978-83-922632-7-2
Electronic_ISBN :
978-83-922632-8-9
