Title :
Predict the characteristics of a terahertz photomixer based on HEMT with the cap region from the analyitcal theory
Author :
Chen, Y. ; He, J. ; Mou, X. ; Wei, Y. ; Lou, H. ; Liu, C. ; Lin, X. ; Zhang, X.
Author_Institution :
Peking University Shenzhen Graduate School, CHINA
Abstract :
The characteristics of a terahertz photomixer using the excitation of plasma oscillation in the channel of a high-electron mobility transistor (HEMT) with the cap region are predicted in this paper from the developed analytic model. In the proposed model, the photo beam is inputted to the absorption layer of HEMT through the ungated area. Starting from the Euler equation and continuity equation, we obtained a response expression depicting the terahertz characteristics of that HEMT photomixer. As a result, the response as a function of the signal frequency is analyzed and the dependence of resonant frequency and amplitude on different length of cap region, voltage, and physical parameters are demonstrated.
Keywords :
Absorption; Charge carrier processes; Electron optics; Equations; Frequency; HEMTs; MODFETs; Optical beams; Plasma properties; Predictive models; HEMT; Terahertz photomixer; analytical model; plasma excitation; two dimensional gas (2DEG);
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on
Conference_Location :
Poznan, Poland
Print_ISBN :
978-83-922632-7-2
Electronic_ISBN :
978-83-922632-8-9
