Title :
The l/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET
Author :
Anderson, R.J. ; Spann, J. ; Yang, J. ; Thornton, T.J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky junction transistor (SJT). Results from 2 mum gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics
Keywords :
1/f noise; Schottky gate field effect transistors; electric noise measurement; low-power electronics; radiation hardening (electronics); semiconductor device measurement; semiconductor device noise; 1/f noise; 2 micron; 293 to 298 K; Schottky junction transistor; drain current noise power spectrum; gate referred noise power spectrum; low power MESFET; radiation hardened subthreshold MESFET; room temperature measurement; subthreshold d.c. characteristics; Capacitance; Low-frequency noise; MESFETs; MOSFET circuits; Noise measurement; Prototypes; Radiation hardening; Silicon on insulator technology; Temperature measurement; Voltage;
Conference_Titel :
Aerospace Conference, 2004. Proceedings. 2004 IEEE
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-8155-6
DOI :
10.1109/AERO.2004.4620172
