Title :
A 40 Gbit/s transimpedance amplifier in 0.25 μm SiGe technology with ultra low power consumption
Author :
Hauptmann, S. ; Schoeniger, D. ; Eickhoff, R. ; Ellinger, F. ; Scheytt, C.
Author_Institution :
Dresden Univ. of Technol., Dresden
Abstract :
In this work, a transimpedance amplifier for optical communication links up to 40 Gbit/s is developed. The amplifier is designed to operate in an integrated receiver front-end together with a commercially available photo diode. The amplifier circuit consists of a four-stage architecture with an optimized input impedance and a high transimpedance over a large bandwidth. Manufactured in a 0.25 mum SiGe-BiCMOS technology, the amplifier achieves a measured power gain of 31 dB and a measured transimpedance of 73 dB Omega over a bandwidth of 30 GHz. The circuit consumes 32 mW and the chip area amounts to 0.187 mm2 including pads.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; low-power electronics; operational amplifiers; optical receivers; photodiodes; BiCMOS technology; SiGe; amplifier; bandwidth 30 GHz; bit rate 40 Gbit/s; commercially available photo diode; gain 31 dB; integrated receiver front-end; optical communication links; power 32 mW; size 0.25 mum; transimpedance amplifier; Bandwidth; Energy consumption; Gain measurement; Germanium silicon alloys; Integrated circuit measurements; Integrated circuit technology; Optical amplifiers; Power measurement; Semiconductor device measurement; Silicon germanium;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
