Title :
GaN technology for microwave applications
Author :
Delage, Sylvain L. ; diForte-Poisson, M.-A. ; Morvan, E. ; Chartier, E. ; Laurent, M. ; Aubry, R. ; Bernard, S. ; Lancereau, D. ; Piotrowicz, S. ; Grimbert, B. ; Gaquière, C. ; Dambrine, G. ; de Jaeger, J.-C.
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis
Abstract :
GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology.
Keywords :
aluminium compounds; gallium compounds; microwave devices; AlGaN-GaN; end-users; microwave applications; Aluminum gallium nitride; Frequency; Gallium nitride; Heterojunctions; Lattices; Microwave devices; Microwave technology; Silicon carbide; Substrates; Thermal conductivity;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
