Title :
23 GHz LNA with 1.5 V × 1 mA supply in low-fT SiGe technology
Author :
Hauptmann, Stefan ; Ellinger, Frank ; Sakalas, Paulius
Author_Institution :
Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden
Abstract :
A 23 GHz low noise amplifier using silicon germanium heterojunction bipolar transistors (HBTs) is presented in this paper. It is demonstrated that low power consuming low noise amplifiers (LNAs) operating above 20 GHz can be designed with a low cost 60-GHz-fT BiCMOS technology. The fully integrated circuit has a die area of only 0.46 mm2. At 50 Omega terminations, a power gain of |S21| = 9.3 dB, a noise figure of NF = 4.3 dB, and an input-referred 1-dBcompression point of P-1 dB = -18.9 dBm are measured. The complete circuit consumes only 1.5 mW power with a supply voltage of 1.5 V and has to the authorpsilas knowledge the highest figure of merit reported to date.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; heterojunction bipolar transistors; low noise amplifiers; HBT; LNA; SiGe; current 1 mA; frequency 23 GHz; frequency 60 GHz; fully integrated circuit; gain 9.3 dB; heterojunction bipolar transistors; input-referred compression point; low noise amplifier; low power consumption; noise figure; noise figure 4.3 dB; power 1.5 mW; power gain; resistance 50 ohm; voltage 1.5 V; BiCMOS integrated circuits; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
