DocumentCode :
476569
Title :
Modeling polysilicon capacitors and resistors for integrated circuits
Author :
Marozsák, Tamás
Author_Institution :
Budapest Univ. of Technol., Budapest
fYear :
2008
fDate :
19-21 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
The aim of this paper to investigate the possible simplified equivalent circuits for resistors and capacitors made of poly layers in integrated circuits. Compromise has to be done when choosing device model regarding model accuracy and model complexity. This paper tries to find appropriate device models together with their limits.
Keywords :
capacitors; elemental semiconductors; equivalent circuits; integrated circuit modelling; monolithic integrated circuits; resistors; silicon; Si; integrated circuits; model accuracy; model complexity; polysilicon capacitor-resistor modeling; Capacitors; Circuit simulation; Computational modeling; Contact resistance; Equivalent circuits; Frequency; Integrated circuit modeling; Mesh networks; Parasitic capacitance; Resistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
Type :
conf
Filename :
4630224
Link To Document :
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