Title :
Analysis of quasi-static assumption in nonlinear FinFET model
Author :
Crupi, G. ; Caddemi, A. ; Schreurs, D. ; Homayouni, M. ; Angelov, I. ; Parvais, B.
Author_Institution :
DFMTFA, Messina Univ., Messina
Abstract :
The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
Keywords :
MOSFET; microwave circuits; device geometries; intrinsic admittance parameters; model simulations; nonlinear FinFET model; quasistatic nonlinear microwave model; Admittance; Cutoff frequency; FinFETs; Frequency measurement; Microwave FETs; Microwave devices; Microwave measurements; Signal analysis; Solid modeling; Testing;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
