DocumentCode
476578
Title
Design and investigation of a travelling wave amplifier in SOI CMOS with bulk contacts for operation up to 40 GHz
Author
Ellinger, F. ; Sakalas, P. ; von Buren, G. ; Rodoni, L.C.
Author_Institution
Dresden Univ. of Technol., Dresden
fYear
2008
fDate
19-21 May 2008
Firstpage
1
Lastpage
4
Abstract
The design of a travelling wave amplifier in silicon on insulator CMOS technology with operation up to 40 GHz is presented. Bulk contacts are implemented to avoid undesired memory effects. The influence of the applied bulk voltage is investigated. At 50 Omega terminations and 2 V times 38 mA supply power, a gain of more than 10 dB and 8 dB are measured up to 26 GHz and 40 GHz, respectively. Between 1 GHz and 10 GHz, the noise figure is below 6 dB.
Keywords
CMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; silicon-on-insulator; travelling wave amplifiers; SOI CMOS; bulk contacts; bulk voltage; current 38 mA; frequency 1 GHz; frequency 10 GHz; noise figure; resistance 50 ohm; silicon on insulator; travelling wave amplifier; voltage 2 V; Bandwidth; CMOS technology; Circuits; Frequency; Gain; Operational amplifiers; Parasitic capacitance; Radiofrequency amplifiers; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location
Wroclaw
Print_ISBN
978-83-906662-8-0
Type
conf
Filename
4630233
Link To Document