Title :
Design and investigation of a travelling wave amplifier in SOI CMOS with bulk contacts for operation up to 40 GHz
Author :
Ellinger, F. ; Sakalas, P. ; von Buren, G. ; Rodoni, L.C.
Author_Institution :
Dresden Univ. of Technol., Dresden
Abstract :
The design of a travelling wave amplifier in silicon on insulator CMOS technology with operation up to 40 GHz is presented. Bulk contacts are implemented to avoid undesired memory effects. The influence of the applied bulk voltage is investigated. At 50 Omega terminations and 2 V times 38 mA supply power, a gain of more than 10 dB and 8 dB are measured up to 26 GHz and 40 GHz, respectively. Between 1 GHz and 10 GHz, the noise figure is below 6 dB.
Keywords :
CMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; silicon-on-insulator; travelling wave amplifiers; SOI CMOS; bulk contacts; bulk voltage; current 38 mA; frequency 1 GHz; frequency 10 GHz; noise figure; resistance 50 ohm; silicon on insulator; travelling wave amplifier; voltage 2 V; Bandwidth; CMOS technology; Circuits; Frequency; Gain; Operational amplifiers; Parasitic capacitance; Radiofrequency amplifiers; Substrates; Voltage;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
