Title :
SIC MESFET class E microwave power amplifier
Author :
Makarov, Denis G. ; Printsovskii, Vladimir A. ; Krizhanovski, Vladimir G. ; Kistchinsky, Andrew A.
Author_Institution :
Radio Phys. Dept., Donetsk Nat. Univ., Donetsk
Abstract :
The simulation and experimental analysis of SiC MESFET class E power amplifier with enhanced frequency band was carried out. A specific multi-resonant output matching network was used to obtain required load impedance at the drain of transistor within desired bandwidth. The effect of transistor on-resistance on efficiency of power amplifier was considered. In the bandwidth of 800-1070 MHz output power of 2.5 W with power-added efficiency of 48% and DC supply voltage of 15 V was demonstrated.
Keywords :
MESFET circuits; UHF power amplifiers; microwave power amplifiers; silicon compounds; wide band gap semiconductors; MESFET class E microwave power amplifier; SiC; efficiency 48 percent; enhanced frequency band; frequency 800 MHz to 1070 MHz; multi-resonant output matching network; power 2.5 W; power-added efficiency; transistor on-resistance effect; voltage 15 V; Analytical models; Bandwidth; Frequency; Impedance matching; MESFETs; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Silicon carbide;
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2008. MIKON 2008. 17th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-83-906662-8-0
