A Novel Four-Terminal Ferroelectric Tunnel FET for Quasi-Ideal Switch

Author

Kumar, Mirgender ; Jit, Satyabrata

Author_Institution

Dept. of Electron. Eng., Indian Inst. of Technol. (Banaras Hindu Univ.), Varanasi, India

Volume

14

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

600

Lastpage

602

Abstract

This letter reports a novel four-terminal ferroelectric tunnel field effect transistor (4T Fe-TFET) on SOI substrates where an extra tunnel-gate (T-Gate) isolated from the main drive gate has been placed over the source region of Fe-TFET to achieve the steepest possible subthreshold swing (SS) characteristics below the Boltzmann limit. The tunneling length of the Fe-TFET is observed to be decreased with the increase in the negative bias voltage of the T-gate which has been explored for improving the SS as low as 0.5 mV/dec for sub-30 nm channel length Fe-TFETs and thereby making the proposed 4 T Fe-TFET a wonderful quasi-ideal CMOS switching device.

Keywords

CMOS integrated circuits; ferroelectric devices; field effect transistor switches; tunnel transistors; tunnelling; 4T Fe-TFET; Boltzmann limit; SOI substrates; Si; four-terminal ferroelectric tunnel field effect transistor; main drive gate; negative bias voltage; quasiideal CMOS switching device; subthreshold swing characteristics; tunnel-gate; tunneling length; Capacitance; Field effect transistors; Logic gates; Plasmas; Switches; Tunneling; Charge plasma; Ferroelectric insulator; Steep subthreshold swing; Tunnel FET (TFET); charge plasma; ferroelectric insulator; steep subthreshold swing;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2015.2427195

Filename

7097054