Influence of temperature on the operation of strained triple-gate FinFETs

In this work, the influence of the temperature variation, in the range of 200K up to 380K, on the performance of biaxially strained FinFETs with high-kappa dielectrics (HfO₂), TiN metal gate and undoped body is investigated. It is demonstrated that narrow FinFETs present slightly smaller improvement at lower temperatures on the maximum transconductance (and hence mobility) and transconductance-to-drain current ratio than narrower ones. On the other hand, the subthreshold slope of narrow FinFETs is better than for narrow ones at any temperatue. The temperature reduction slightly reduces the gain of long-channel FinFETs in about 3 dB whereas the fin width increase from 20 nm to 870 nm degrades the gain by 13 dB at any temperature.