DocumentCode :
47895
Title :
Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers
Author :
Altet, Josep ; Mateo, D. ; Gomez, David ; Gonzalez Jimenez, Jose Luis ; Martineau, Baudouin ; Siligaris, Alexandre ; Aragones, X.
Author_Institution :
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain
Volume :
24
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
272
Lastpage :
274
Abstract :
This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.
Keywords :
built-in self test; circuit testing; cost reduction; elemental semiconductors; frequency measurement; millimetre wave power amplifiers; silicon; temperature measurement; temperature sensors; PA; Si; bandwidth 60 GHz; central frequency measurement; cost reduction testing; functional built-in tester; gain 3 dB; low frequency temperature measurement; mmw power amplifier; on-chip measurement technique; self-healing strategy; temperature sensor; Bandwidth; Frequency measurement; Gain; Monitoring; Radio frequency; Temperature measurement; Temperature sensors; Built-in test; CMOS millimeter wave integrated circuits; design for testability; frequency response; temperature measurement;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2013.2293668
Filename :
6701395
Link To Document :
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