DocumentCode :
47923
Title :
350 mV, 5 GHz Class-D Enhanced Swing Differential and Quadrature VCOs in 65 nm CMOS
Author :
Guha Roy, Ankur ; Dey, Siladitya ; Goins, Justin B. ; Fiez, Terri S. ; Mayaram, Kartikeya
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Volume :
50
Issue :
8
fYear :
2015
fDate :
Aug. 2015
Firstpage :
1833
Lastpage :
1847
Abstract :
A new enhanced swing class-D VCO which operates from a supply voltage as low as 300 mV is presented. The architectural advantages are described along with an analysis for the oscillation frequency. Prototype differential and quadrature variants of the proposed VCO have been implemented in a 65 nm RF CMOS process with a 5 GHz VCO oscillation frequency. At a 350 mV supply, the measured phase noise performance for the quadrature VCO with a 5% tuning range is -137.1 dBc/Hz at 3 MHz offset with a power dissipation of 2.1 mW from a 0.35 V supply. The highest resulting figure-of-merit (FoM) is 198.3 dBc/Hz.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; microwave integrated circuits; microwave oscillators; noise measurement; phase noise; voltage-controlled oscillators; FoM; RF CMOS process; VCO oscillation frequency; class-D enhanced swing differential VCO; figure-of-merit; frequency 5 GHz; phase noise performance; power 2.1 mW; power dissipation; quadrature VCO; size 65 nm; voltage 350 mV; Couplings; Inductors; MOSFET; Noise; Resonant frequency; Voltage-controlled oscillators; Class-D; differential VCO; enhanced swing; low voltage VCO; oscillators; quadrature VCO; transformer coupling; voltage controlled oscillators;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2420677
Filename :
7097098
Link To Document :
بازگشت