Title :
High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2
Author :
Xiangyu Yang ; Bongmook Lee ; Misra, Veena
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
We report high mobility Si-face 4H-SiC MOSFET results via a novel interface engineering technique using a gate-stack consisting of lanthanum silicate (LaSiOx) and atomic layer deposited SiO2. Peak field effect mobility of 132.6 cm2/V · s has been achieved while maintaining a positive threshold voltage (3.1 V). From the peak field effect mobility´s dependence on measurement temperatures, it has been found that the mobility of La containing MOSFET is limited by phonon scattering.
Keywords :
MOSFET; atomic layer deposition; lanthanum compounds; silicon compounds; wide band gap semiconductors; LaSiOx; SiC; SiO2; atomic layer deposition; gate-stack; high mobility 4H-silicon carbide lateral MOSFET; interface engineering technique; lanthanum silicate; metal oxide semiconductor field effect transistor; peak field effect mobility; phonon scattering; threshold voltage; voltage 3.1 V; Dielectrics; Logic gates; MOSFET; Scattering; Silicon carbide; Temperature measurement; Threshold voltage; Atomic layer deposition; SiC; lanthanum silicate; mobility;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2399891
