Title :
Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in
Memristors
Author :
Hughart, David R. ; Pacheco, Jose L. ; Lohn, Andrew J. ; Mickel, Patrick R. ; Bielejec, Edward ; Vizkelethy, Gyorgy ; Doyle, Barney L. ; Wolfley, Steven L. ; Dodd, Paul E. ; Shaneyfelt, Marty R. ; McLain, Michael L. ; Marinella, Matthew J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The locations of conductive regions in TaOx memristors are spatially mapped using a microbeam and Nanoimplanter by rastering an ion beam across each device while monitoring its resistance. Microbeam irradiation with 800 keV Si ions revealed multiple sensitive regions along the edges of the bottom electrode. The rest of the active device area was found to be insensitive to the ion beam. Nanoimplanter irradiation with 200 keV Si ions demonstrated the ability to more accurately map the size of a sensitive area with a beam spot size of 40 nm by 40 nm. Isolated single spot sensitive regions and a larger sensitive region that extends approximately 300 nm were observed.
Keywords :
electric resistance; memristors; nanoelectronics; resistive RAM; semiconductor materials; tantalum compounds; Si ions; TaOx; active device area; beam spot size; bottom electrode; conductive regions; electron volt energy 200 keV; electron volt energy 800 keV; isolated single spot sensitive regions; memristors; microbeam irradiation; multiple conduction channels; nanoimplanter irradiation; radiation-induced resistance; resistance monitoring; size 40 nm; Electrical resistance measurement; Memristors; Radiation effects; Resistance; Displacement damage; Nanoimplanter; RRAM; memristor; microbeam; radiation effects; resistive memory; tantalum;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2365139