An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

Author

England, Troy D. ; Arora, Rajkumar ; Fleetwood, Zachary E. ; Lourenco, Nelson E. ; Moen, Kurt A. ; Cardoso, Adilson S. ; McMorrow, Dale ; Roche, Nicholas J.-H ; Warner, Jeffrey H. ; Buchner, Stephen P. ; Paki, Pauline ; Sutton, Akil K. ; Freeman, G. ; Cre

Author_Institution

Sch. of Electr. & Comput. Eng. at the, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4405

Lastpage

4411

Abstract

This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first experimental comparison of SET between 45-nm and 32-nm RF-CMOS/SOI devices, and presents implications for circuit design in both technologies. This work leverages a number of different device types and is supported by calibrated TCAD simulations.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit design; radiation hardening (electronics); radiofrequency integrated circuits; silicon-on-insulator; technology CAD (electronics); RF-CMOS-SOI technology; SET response; SOI RF-CMOS circuits; SOI RF-CMOS devices; Si; TCAD simulations; cascode structures; charge deposition; circuit design; physical mechanisms; single event transient response; size 32 nm; size 45 nm; two-photon absorption; CMOS integrated circuits; Radio frequency; Silicon-on-insulator; Single event transients; Transient analysis; Cascode amplifier; RF CMOS; silicon on insulator; single event transient;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2289368

Filename

6677622