DocumentCode :
48011
Title :
A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays
Author :
Wirthlin, Michael ; Lee, Daewoo ; Swift, Gary ; Quinn, Heather
Author_Institution :
Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3080
Lastpage :
3087
Abstract :
Extracting information about MCUs from SEU data sets can be a challenge without physical layout information. Many modern static-random access memory (SRAM) components interleave memory cells to improve the robustness of error-correcting codes (ECC) that detect and correct errors in the memory array. Bit interleaving has also become popular with other components with large SRAM arrays, including field-programmable gate arrays (FPGAs). In this paper, we present a technique for extracting MCUs statistically from radiation test data. Further, we use this technique to extract MCU information from a 28-nm FPGA that uses interleaving to protect the configuration memory.
Keywords :
SRAM chips; error correction codes; field programmable gate arrays; radiation hardening (electronics); FPGA; MCU data sets; SECDED-protected arrays; SEU data sets; SRAM; adjacent multiple-cell upsets; bit interleaving; field programmable gate arrays; interleaved protected arrays; memory array; memory cells; radiation test data; single-error correct-double-error detect codes; size 28 nm; static random access memory; Arrays; Error correction codes; Field programmable gate arrays; Layout; SRAM cells; Field programmable gate arrays (FPGAs); multiple-bit upset; reconfiguration; single event effect (SEE); soft errors; testing techniques;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2366913
Filename :
6962916
Link To Document :
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