• DocumentCode
    48011
  • Title

    A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays

  • Author

    Wirthlin, Michael ; Lee, Daewoo ; Swift, Gary ; Quinn, Heather

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Brigham Young Univ., Provo, UT, USA
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3080
  • Lastpage
    3087
  • Abstract
    Extracting information about MCUs from SEU data sets can be a challenge without physical layout information. Many modern static-random access memory (SRAM) components interleave memory cells to improve the robustness of error-correcting codes (ECC) that detect and correct errors in the memory array. Bit interleaving has also become popular with other components with large SRAM arrays, including field-programmable gate arrays (FPGAs). In this paper, we present a technique for extracting MCUs statistically from radiation test data. Further, we use this technique to extract MCU information from a 28-nm FPGA that uses interleaving to protect the configuration memory.
  • Keywords
    SRAM chips; error correction codes; field programmable gate arrays; radiation hardening (electronics); FPGA; MCU data sets; SECDED-protected arrays; SEU data sets; SRAM; adjacent multiple-cell upsets; bit interleaving; field programmable gate arrays; interleaved protected arrays; memory array; memory cells; radiation test data; single-error correct-double-error detect codes; size 28 nm; static random access memory; Arrays; Error correction codes; Field programmable gate arrays; Layout; SRAM cells; Field programmable gate arrays (FPGAs); multiple-bit upset; reconfiguration; single event effect (SEE); soft errors; testing techniques;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2366913
  • Filename
    6962916