DocumentCode
481274
Title
Influence of configurations of chamber and coil on uniformity of plasma distribution for inductively coupled plasma etcher
Author
Cheng, Jia ; Zhu, Yu
Author_Institution
Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
fYear
2006
fDate
6-7 Nov. 2006
Firstpage
1113
Lastpage
1117
Abstract
Based on the modules of plasma and electromagnetic field etc. in the commercial software, CFD-ACE+, a two-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature-Te and the electron number density-Ne of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distributions profile of the plasma parameters above the wafer’s surface for the different chambers and coils were compared. These results demonstrate that the uniformity of the plasma distribution is improved with the height of the chamber and the radius of the coil, and a little enhanced by the modification of the chamber. This study provides the valuable references to design and modify the chamber and the coil for the ICP equipments.
Keywords
CFD-ACE+; Dry etching process; electron number density; electron temperature; inductively coupled plasma (ICP);
fLanguage
English
Publisher
iet
Conference_Titel
Technology and Innovation Conference, 2006. ITIC 2006. International
Conference_Location
Hangzhou
ISSN
0537-9989
Print_ISBN
0-86341-696-9
Type
conf
Filename
4752166
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