• DocumentCode
    481274
  • Title

    Influence of configurations of chamber and coil on uniformity of plasma distribution for inductively coupled plasma etcher

  • Author

    Cheng, Jia ; Zhu, Yu

  • Author_Institution
    Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
  • fYear
    2006
  • fDate
    6-7 Nov. 2006
  • Firstpage
    1113
  • Lastpage
    1117
  • Abstract
    Based on the modules of plasma and electromagnetic field etc. in the commercial software, CFD-ACE+, a two-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature-Te and the electron number density-Ne of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distributions profile of the plasma parameters above the wafer’s surface for the different chambers and coils were compared. These results demonstrate that the uniformity of the plasma distribution is improved with the height of the chamber and the radius of the coil, and a little enhanced by the modification of the chamber. This study provides the valuable references to design and modify the chamber and the coil for the ICP equipments.
  • Keywords
    CFD-ACE+; Dry etching process; electron number density; electron temperature; inductively coupled plasma (ICP);
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Technology and Innovation Conference, 2006. ITIC 2006. International
  • Conference_Location
    Hangzhou
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-696-9
  • Type

    conf

  • Filename
    4752166